PART |
Description |
Maker |
GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
IS61NLP12832A-250B2 IS61NLP12832A-200B3I IS61NLP12 |
128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 32 ZBT SRAM, 2.6 ns, PBGA119 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 32 ZBT SRAM, 3.1 ns, PBGA165 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 3.1 ns, PBGA165 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 32 ZBT SRAM, 2.6 ns, PQFP100 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 3.1 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
GS840H18AB-100 GS840H36AB-100I GS840H32AB-180 GS84 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 12 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 12 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 10 ns, PQFP100 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 10 ns, PBGA119
|
GSI Technology, Inc.
|
IS61NVF12836A-6.5B2 IS61NVF12836A-6.5B2I IS61NLF25 |
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 6.5 ns, PBGA119 128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 7.5 ns, PBGA165 128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 6.5 ns, PQFP100 128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 7.5 ns, PBGA119 128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 7.5 ns, PQFP100 128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
GVT71128DA36T-4 GVT71128DA36B-4 GVT71128DA36B-4.4 |
x18 Fast Synchronous SRAM x18快速同步SRAM x36 Fast Synchronous SRAM x36快速同步SRAM 256K X 18 CACHE SRAM, 2.5 ns, PBGA119
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
|
Sony, Corp.
|
IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8)启动块闪存系列 ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes 28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http:// Intel, Corp. PROM Intel Corp. Intel Corporation
|
AT49BV2048 AT49LV2048 AT49LV2048A AT49LV2048A-70RC |
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage??Flash Memory 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 2兆位56 × 8/128K × 16)单2.7伏电池电压⑩闪存 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 3V PROM, 70 ns, PDSO44 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 90 ns, PDSO48 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 120 ns, PDSO48 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage⑩ Flash Memory 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage?/a> Flash Memory
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100 Replaced by PTH12000W :
|
MOTOROLA INC NEC, Corp. Motorola Mobility Holdings, Inc. Motorola, Inc.
|
LH532600 LH532600N LH532600D LH532600T LH532600TR |
CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM CMOS 2M (256K x 8/128K x 16) MROM
|
SHARP[Sharp Electrionic Components] Sharp Corporation
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